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Imaging as-grown interstitial iron concentration on boron-doped silicon bricks via spectral photoluminescence

Mitchell, Bernhard; MacDonald, Daniel; Schon, J; Weber, Jurgen; Wagner, Hannes; Trupke, Thorsten

Description

The interstitial iron concentration measured directly on the side face of a silicon brick after crystallization and brick squaring can give important early and fast feedback regarding its material quality. Interstitial iron is an important defect in crystalline silicon, particularly in directionally solidified ingots. Spectral photoluminescence intensity ratio imaging has recently been demonstrated to independently provide high-resolution bulk lifetime images and is therefore ideally suited to...[Show more]

dc.contributor.authorMitchell, Bernhard
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorSchon, J
dc.contributor.authorWeber, Jurgen
dc.contributor.authorWagner, Hannes
dc.contributor.authorTrupke, Thorsten
dc.date.accessioned2015-12-13T22:31:09Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/75163
dc.description.abstractThe interstitial iron concentration measured directly on the side face of a silicon brick after crystallization and brick squaring can give important early and fast feedback regarding its material quality. Interstitial iron is an important defect in crystalline silicon, particularly in directionally solidified ingots. Spectral photoluminescence intensity ratio imaging has recently been demonstrated to independently provide high-resolution bulk lifetime images and is therefore ideally suited to assess spatially variable multicrystalline silicon bricks. Here, we demonstrate this technique to enable imaging of the interstitial iron concentration on boron-doped silicon bricks and thick silicon slabs. We present iron concentration studies for two directionally solidified silicon bricks of which one is a standard multicrystalline and the other is a seeded-growth ingot. This lifetime-based measurement technique is highly sensitive to interstitial iron with detection limits down to concentrations of about 1× 1010 cm-3. Its accuracy is enhanced, as the injection level remains below 2×10 12 cm-3 during the measurement and, hence, avoids the influence of injection level dependences on the conversion factor, although it remains dependent on the knowledge of the electron capture cross section of interstitial iron in silicon. Access to both bulk lifetime and dissolved iron concentration provides a valuable parameter set of as-grown crystal quality and the relative recombination fraction of interstitial iron via Shockley-Read-Hall (SRH) analysis. Simulated interstitial iron concentration profiles support the presented experimental data.
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.titleImaging as-grown interstitial iron concentration on boron-doped silicon bricks via spectral photoluminescence
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume4
dc.date.issued2014
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationU3488905xPUB4495
local.type.statusPublished Version
local.contributor.affiliationMitchell, Bernhard, University of New South Wales
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationSchon, J, Fraunhofer Institut für Solare Energiesysteme
local.contributor.affiliationWeber, Jurgen, BT Imaging
local.contributor.affiliationWagner, Hannes, Leibniz University of Hanover
local.contributor.affiliationTrupke, Thorsten, University of New South Wales
local.description.embargo2037-12-31
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage1185
local.bibliographicCitation.lastpage1196
local.identifier.doi10.1109/JPHOTOV.2014.2326714
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2015-12-11T08:59:12Z
local.identifier.scopusID2-s2.0-84906785799
CollectionsANU Research Publications

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