The influence of thermal effects and dielectric films on the electronic quality of p+-doped silicon processed by nanosecond laser
Laser doping of silicon is a complex process involving thermal effects and interactions between different materials far from equilibrium and over a short period. In this paper, diffused samples capped with different dielectric films (including bare surfaces) are processed using laser pulses of 20-400 ns duration and characterized by photoluminescence (PL) imaging to study the degradation of the electronic properties of the processed regions. This way, without the interference of a dopant...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
|01_Xu_The_influence_of_thermal_2014.pdf||664.96 kB||Adobe PDF||Request a copy|
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