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Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Elliman, Robert; Nawaz (Saleh), Muhammad; Kim, Tae-Hyun; Venkatachalam, Dinesh; Belay, Kidane; Ruffell, Simon; Kurunczi, P.; England, J.

Description

Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/75031
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2012.11.094

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