Temperature dependence of blistering in hydrogen implanted Si and Ge
The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for bliste
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Pyke_Temperature_dependence_of_2013.pdf||1.76 MB||Adobe PDF||Request a copy|
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