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Temperature dependence of blistering in hydrogen implanted Si and Ge

Pyke, Daniel; Elliman, Robert; McCallum, Jeffrey C

Description

The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for bliste

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/75023
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2012.10.037

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