Temperature dependence of blistering in hydrogen implanted Si and Ge
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Pyke, Daniel; Elliman, Robert; McCallum, Jeffrey C.
Description
The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for bliste
Collections | ANU Research Publications |
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Date published: | 2013 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/75023 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/j.nimb.2012.10.037 |
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01_Pyke_Temperature_dependence_of_2013.pdf | 1.76 MB | Adobe PDF | Request a copy |
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