Formation and characterization of Ta 2 O 5 /TaO x films formed by O ion implantation
Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Ruffell_Formation_and_characterization_2013.pdf||1.27 MB||Adobe PDF||Request a copy|
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