Twinning superlattice formation in GaAs nanowires
Semiconductor nanowires have proven a versatile platform for the realization of novel structures unachievable by traditional planar epitaxy techniques. Among these, the periodic arrangement of twin planes to form twinning superlattice structures has gener
|Collections||ANU Research Publications|
|01_Burgess_Twinning_superlattice_2013.pdf||1.75 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.