On the surface passivation of textured C-Si by PECVD silicon nitride
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Description
We investigate the surface passivation of crystalline silicon (c-Si) wafers that are textured with random upright pyramids and passivated with amorphous silicon nitride (SiNx ). Over a large range of refractive indices (n = 1.89-4.1 at 632 nm), we achieve
Collections | ANU Research Publications |
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Date published: | 2013 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/74892 |
Source: | IEEE Journal of Photovoltaics |
DOI: | 10.1109/JPHOTOV.2013.2271832 |
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