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Structural Perturbations Within Ge Nanocrystals in Silica

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Cheung, Allen; de Azevedo, Gustavo; Glover, Christopher; Llewellyn, David; Elliman, Robert; Foran, Garry J; Ridgway, Mark C

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Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.

dc.contributor.authorCheung, Allen
dc.contributor.authorde Azevedo, Gustavo
dc.contributor.authorGlover, Christopher
dc.contributor.authorLlewellyn, David
dc.contributor.authorElliman, Robert
dc.contributor.authorForan, Garry J
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T22:30:25Z
dc.date.available2015-12-13T22:30:25Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/74829
dc.description.abstractGe nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Atoms; Computer simulation; Crystal microstructure; Grain size and shape; Interfaces (materials); Ion implantation; Molecular dynamics; Semiconducting germanium; Silica; Thermooxidation; X ray spectroscopy; Bonding distortion; Extended x ray ab
dc.titleStructural Perturbations Within Ge Nanocrystals in Silica
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume84
dc.date.issued2004
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub4325
local.type.statusPublished Version
local.contributor.affiliationCheung, Allen, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationde Azevedo, Gustavo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLlewellyn, David, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.issue2
local.bibliographicCitation.startpage278
local.bibliographicCitation.lastpage280
local.identifier.doi10.1063/1.1639136
dc.date.updated2015-12-11T08:53:10Z
local.identifier.scopusID2-s2.0-0842333233
CollectionsANU Research Publications

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