Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers
In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 3
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|Source:||Physica Status Solidi: Rapid Research Letters|
|01_Rougieux_Thermal_deactivation_of_2013.pdf||379.04 kB||Adobe PDF||Request a copy|
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