Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Abstract

In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 3