Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers
-
Altmetric Citations
Rougieux, Fiacre; Grant, Nicholas; MacDonald, Daniel
Description
In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 3
Collections | ANU Research Publications |
---|---|
Date published: | 2013 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/74808 |
Source: | Physica Status Solidi: Rapid Research Letters |
DOI: | 10.1002/pssr.201308053 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Rougieux_Thermal_deactivation_of_2013.pdf | 379.04 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 19 May 2020/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator