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Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Rougieux, Fiacre; Grant, Nicholas; MacDonald, Daniel

Description

In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 3

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/74808
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201308053

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