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Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

Zhang, Xinyu; Cuevas, Andres

Description

The intentional addition of hydrogen during reactive sputtering of AlOx films has led to a dramatic improvement of the surface passivation of crystalline silicon wafers achieved with this technique. The 5 ms effective minority carrier lifetime measured on

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/74799
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201308027

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