Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation
The intentional addition of hydrogen during reactive sputtering of AlOx films has led to a dramatic improvement of the surface passivation of crystalline silicon wafers achieved with this technique. The 5 ms effective minority carrier lifetime measured on
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi: Rapid Research Letters|
|01_Zhang_Plasma_hydrogenated,_2013.pdf||392.48 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator