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Mutual Passivation of Group IV Donors and Isovalent Nitrogen in Diluted GaN x As 1-x Alloys

Yu, Kin Man; Wu, J; Walukiewicz, W; Shan, Wei; Beeman, J W; Mars, D E; Chamberlin, D R; Scarpulla, M A; Dubon, O D; Ridgway, Mark C; Geisz, J F


We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaNxAs1-x alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IVGa-NAs pairs. In Si-doped GaInN0.017As0.983 the electron concentration starts to decrease rapidly at an annealing temperature of 700°C from ∼ 3 × 1019cm-3 in the as-grown state to less than 10 16cm-3 after an annealing at 900°C for 10s. At the same time, annealing of this...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Physica B
DOI: 10.1016/j.physb.2003.09.060


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