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Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy

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Chen, Zi-Bin; Lei, Wen; Chen, Bin; Wang, Y. B.; Liao, Xiao-Zhou; Zhou, J.; Ringer, Simon P.; Jagadish, Chennupati; Tan, Hark Hoe

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A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface n

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/74718
Source: Scripta Materialia
DOI: 10.1016/j.scriptamat.2013.07.020

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