Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface n
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