Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
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Chen, Zi-Bin; Lei, Wen; Chen, Bin; Wang, Y. B.; Liao, Xiao-Zhou; Zhou, J.; Ringer, Simon P.; Jagadish, Chennupati; Tan, Hark Hoe
Description
A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface n
Collections | ANU Research Publications |
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Date published: | 2013 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/74718 |
Source: | Scripta Materialia |
DOI: | 10.1016/j.scriptamat.2013.07.020 |
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