Electrical properties of atomic layer deposited Al 2 O 3  with anneal temperature for surface passivation

Suh, Dong Chul; Liang, Wensheng

doi:10.1016/j.tsf.2013.05.082

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Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

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Suh, Dong Chul; Liang, Wensheng

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The electrical characteristics of Al2O3 layers prepared by the atomic layer deposition technique using O3, H 2O, and plasma O2, as oxidants are investigated through capacitance-voltage measurements of metal-insulator-semiconductor capacitors. Particular e

Collections	ANU Research Publications
Date published:	2013
Type:	Journal article
URI:	http://hdl.handle.net/1885/74516
Source:	Thin Solid Films
DOI:	10.1016/j.tsf.2013.05.082

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Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

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