Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation
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Suh, Dong Chul; Liang, Wensheng
Description
The electrical characteristics of Al2O3 layers prepared by the atomic layer deposition technique using O3, H 2O, and plasma O2, as oxidants are investigated through capacitance-voltage measurements of metal-insulator-semiconductor capacitors. Particular e
Collections | ANU Research Publications |
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Date published: | 2013 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/74516 |
Source: | Thin Solid Films |
DOI: | 10.1016/j.tsf.2013.05.082 |
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