Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
Growth of III-V nanowires on the -oriented industry standard substrates is critical for future integrated nanowire device development. Here we present an in-depth analysis of the seemingly complex ensembles of epitaxial nanowires grown on InP (100) substrates. The nanowires are categorized into three types as vertical, nonvertical, and planar, and the growth directions, facets, and crystal structure of each type are investigated. The nonvertical growth directions are mathematically modeled...[Show more]
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