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Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Du, S.; Burgess, Timothy; Gault, B.; Gao, Qiang; Bao, Peite; Li, Li; Cui, Xiangyuan; Yeoh, Wai Kong; Liu, Hong-Wei; Yao, Lan; Ceguerra, A.V.; Tan, Hoe Hark; Jagadish, Chennupati; Ringer, Simon P.; Zheng, Rongkun


Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimens

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Ultramicroscopy
DOI: 10.1016/j.ultramic.2013.02.012


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