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Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Du, S.; Burgess, Timothy; Gault, B.; Gao, Qiang; Bao, Peite; Li, Li; Cui, Xiangyuan; Yeoh, Wai Kong; Liu, Hong-Wei; Yao, Lan; Ceguerra, A.V.; Jagadish, Chennupati; Ringer, Simon P.; Zheng, Rongkun; Tan, Hark Hoe


Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimens

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Ultramicroscopy
DOI: 10.1016/j.ultramic.2013.02.012


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