Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon
This letter shows that intrinsic hydrogenated amorphous silicon (a-Si:H) films deposited by RF magnetron sputtering can provide outstanding passivation of crystalline silicon surfaces, similar to that achieved by plasma enhanced chemical vapour deposition (PECVD). By using a 2% hydrogen and 98% argon gas mixture as the plasma source, 1.5 Ω cm n-type FZ silicon wafers coated with sputtered a-Si:H films achieved an effective lifetime of 3.5 ms, comparable to the 3 ms achieved by PECVD (RF and...[Show more]
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|Source:||Physica Status Solidi: Rapid Research Letters|
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