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Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon

Kinomura, Atsushi; Horino, Y.; Nakano, Yukihiro; Williams, James

Description

The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5) × 1013 cm-2, below the level th

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/73743
Source: Journal of Applied Physics
DOI: 10.1063/1.2042527

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