Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon
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Kinomura, Atsushi; Horino, Y.; Nakano, Yukihiro; Williams, James
Description
The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5) × 1013 cm-2, below the level th
Collections | ANU Research Publications |
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Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/73743 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.2042527 |
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