Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon
The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5) × 1013 cm-2, below the level th
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
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