Formation and Electronic Structure of Germanium Nanocrystals formed by Ion Beam Synthesis
Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal annealing. Ge74 ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent t
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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