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Formation and Electronic Structure of Germanium Nanocrystals formed by Ion Beam Synthesis

Glover, Christopher; Ridgway, Mark C; Llewellyn, David; Kluth, Patrick; Johannessen, Bernt

Description

Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal annealing. Ge74 ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent t

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/73731
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2005.06.218

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