Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon
Transformation kinetics of nanoindented zones in silicon containing high pressure crystalline phases (Si III and Si XII) during annealing (100 °C<T<450 °C) have been studied using Raman microspectroscopy and cross-sectional transmission electron microscopy. Signature peaks associated with Si III/XII in the Raman spectra were monitored to track the annealing of these phases to polycrystalline Si I as a function of annealing time and temperature. An overall activation energy for this...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters 90.13 (2007): 131901/1-3|
|Ruffell_Annealing2007.pdf||86.54 kB||Adobe PDF|
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