Ruffell, Simon; Bradby, Jodie; Williams, James S
Transformation kinetics of nanoindented zones in silicon containing high pressure crystalline phases
(Si III and Si XII) during annealing (100 °C<T<450 °C) have been studied using Raman
microspectroscopy and cross-sectional transmission electron microscopy. Signature peaks
associated with Si III/XII in the Raman spectra were monitored to track the annealing of these
phases to polycrystalline Si I as a function of annealing time and temperature. An overall activation
energy for this...[Show more]
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