Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
The authors report a simple technique to determine the surface recombination velocity of silicon and other semiconductor surfaces which have been passivated with a dielectric layer, as a function of charge density. A metal-oxide-semiconductor structure, employing large area, partially transparent metal contacts, is used to enable the charging of the surfaces. Simultaneous measurement of the emitter saturation current density Jœ and the effective instantaneous lifetime τinst allows accurate...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters 90.4 (2007): 042104/1-3|
|Jellett_Accurate2007.pdf||105.54 kB||Adobe PDF|
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