The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
In this thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, low temperature oxides, and in particular the degree of surface passivation achievable with such oxides, was also investigated and compared with the properties of oxides grown at higher...[Show more]
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|01front.pdf||front pages NOTE THIS THESIS IS EMBARGOED UNTIL 11 MAY 2012||56.67 kB||Adobe PDF|
|02whole.pdf||whole thesis NOTE THIS THESIS IS EMBARGOED UNTIL 11 MAY 2012||1.59 MB||Adobe PDF|
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