Skip navigation
Skip navigation

Anelastic behavior in GaAs semiconductor nanowires

Chen, Bin; Gao, Qiang; Wang, Yan-Bo; Liao, Xiao-Zhou; Mai, Yiu-Wing; Tan, Hoe Hark; Zou, Jin; Jagadish, Chennupati; Ringer, Simon P.


The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelas

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Nano Letters
DOI: 10.1021/nl401175t


File Description SizeFormat Image
01_Chen_Anelastic_behavior_in_GaAs_2013.pdf3.37 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator