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Threshold Stoichiometry for Beam Induced Nitrogen Depletion of SiN

Timmers, Heiko; Dall (previously Weijers), Tessica; Elliman, Robert; Uribasterra, J; Whitlow, H J; Sarwe, E-L


Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species, the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si ≥ 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)01217-4


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