Threshold Stoichiometry for Beam Induced Nitrogen Depletion of SiN
Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species, the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si ≥ 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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