Characterisation of nitrogen-related defects in compound semiconductors by near-edge x-ray absorption fine structure
We have studied the formation of nitrogen-related defects created in compound semiconductors by low-energy ion bombardment (0.3-5 keV N 2+ or Ar+) using near-edge x-ray absorption fine structure (NEXAFS) around the N K-edge. Nitrogen interstitials and antisites have been identified in NEXAFS spectra of InN and GaN in full agreement with theoretical calculations. Several defect levels within the band gap and the conduction band of GaN and InN were clearly resolved in NEXAFS spectra. We attribute...[Show more]
|Collections||ANU Research Publications|
|Source:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|01_Petravic_Characterisation_of_2008.pdf||629.36 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.