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Characterisation of nitrogen-related defects in compound semiconductors by near-edge x-ray absorption fine structure

Petravic, M; Majlinger, Z; Bozanic, A; Yang, Y W; Gao, Qiang; Crotti, C.


We have studied the formation of nitrogen-related defects created in compound semiconductors by low-energy ion bombardment (0.3-5 keV N 2+ or Ar+) using near-edge x-ray absorption fine structure (NEXAFS) around the N K-edge. Nitrogen interstitials and antisites have been identified in NEXAFS spectra of InN and GaN in full agreement with theoretical calculations. Several defect levels within the band gap and the conduction band of GaN and InN were clearly resolved in NEXAFS spectra. We attribute...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Conference paper
Source: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOI: 10.1109/COMMAD.2008.4802100


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