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New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities

Haberl, Bianca; Guthrie, Malcolm; Sprouster, David; Williams, James; Bradby, Jodie


The pressure-induced phase transformations of a form of amorphous silicon (a-Si) with well characterized impurity levels and structure are examined at pressures up to 40 GPa using in situ synchrotron X-ray radiation. At ∼12 GPa crystallization commences

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Journal of Applied Crystallography
DOI: 10.1107/S0021889813010509


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