Skip navigation
Skip navigation

New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities

Haberl, Bianca; Guthrie, Malcolm; Sprouster, David; Williams, James; Bradby, Jodie


The pressure-induced phase transformations of a form of amorphous silicon (a-Si) with well characterized impurity levels and structure are examined at pressures up to 40 GPa using in situ synchrotron X-ray radiation. At ∼12 GPa crystallization commences

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Journal of Applied Crystallography
DOI: 10.1107/S0021889813010509


File Description SizeFormat Image
01_Haberl_New_insight_into_2013.pdf894.97 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator