New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities
The pressure-induced phase transformations of a form of amorphous silicon (a-Si) with well characterized impurity levels and structure are examined at pressures up to 40 GPa using in situ synchrotron X-ray radiation. At ∼12 GPa crystallization commences
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|Source:||Journal of Applied Crystallography|
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