On Quantifying the Group-V to Group-III Interdiffusion Rates in In x Ga 1-x As/InP Quantum Wells
The interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well structures induced by proton implantation has been investigated using differential reflectance (DR), photoluminescence (PL) and theoretical modelling. Based on DR, PL and modelling results, we found the unique value of k (LV/LIII) ratio for three different InGaAs quantum well structures, namely lattice matched (LM), tensile strained (TS) and compressively strained (CS). The k ratio of TS, LM and CS...[Show more]
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