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How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study

Ruault, M-O; Fortuna, Frank Nicholas; Bernas, Harry; Ridgway, Mark C; Williams, James

Description

Nanocavities were formed in Si substrates by conventional H implantation and thermal annealing, after which the samples were amorphized by Si ion irradiation. The size evolution of the nanocavities was monitored in situ during further ion irradiation with Si or As at temperatures of 300 or 600 K. The decrease in nanocavity diameter during ion irradiation depended linearly on the ion fluence. The rate of shrinkage differed according to the ion beam-induced atomic displacement rate and had little...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/71938
Source: Applied Physics Letters
DOI: 10.1063/1.1509854

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