Skip navigation
Skip navigation
The system will be down for maintenance between 8:00 and 8:15am on Thursday 13, December 2018

Thermal Stability of Ion-implanted Hydrogen in ZnO

Ip, K; Overberg, M E; Heo, Y W; Norton, D P; Pearton, S J; Kucheyev, Sergei; Jagadish, Chennupati; Williams, James; Wilson, R G; Zavada, J M


An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with 1H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1524033


File Description SizeFormat Image
01_Ip_Thermal_Stability_of_2002.pdf122.14 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator