Ip, K; Overberg, M E; Heo, Y W; Norton, D P; Pearton, S J; Kucheyev, Sergei; Jagadish, Chennupati; Williams, James; Wilson, R G; Zavada, J M
An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with 1H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.
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