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Electrical Isolation of ZnO by Ion Bombardment

Kucheyev, Sergei; Deenapanray, Prakash; Jagadish, Chennupati; Williams, James; Yano, Mitsuaki; Koike, Kazuto; Sasa, Shigehiko; Inoue, Makoto; Ogata, Ken Ichi


The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV1H,7Li,16O, and28Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1518560


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