Electrical Isolation of ZnO by Ion Bombardment
The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV1H,7Li,16O, and28Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another...[Show more]
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|Source:||Applied Physics Letters|
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