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Electrical Isolation of ZnO by Ion Bombardment

Kucheyev, Sergei; Deenapanray, Prakash; Jagadish, Chennupati; Williams, James; Yano, Mitsuaki; Koike, Kazuto; Sasa, Shigehiko; Inoue, Makoto; Ogata, Ken Ichi

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The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV1H,7Li,16O, and28Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another...[Show more]

dc.contributor.authorKucheyev, Sergei
dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorWilliams, James
dc.contributor.authorYano, Mitsuaki
dc.contributor.authorKoike, Kazuto
dc.contributor.authorSasa, Shigehiko
dc.contributor.authorInoue, Makoto
dc.contributor.authorOgata, Ken Ichi
dc.date.accessioned2015-12-13T22:19:40Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/71932
dc.description.abstractThe evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV1H,7Li,16O, and28Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another wide-bandgap semiconductor, GaN. Results also show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. However, in all the cases studied, defect-induced electrical isolation of ZnO is unstable to rapid thermal annealing at temperatures above ∼300°C.
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Atomic displacement; Dynamic annealing; Electrical isolation; In-situ; Ion dose; Orders of magnitude; Room temperature; Si ions; Single-crystal wurtzite; Wide-band-gap semiconductor; ZnO; Gallium nitride; Rapid thermal annealing; Sheet resistance; Zinc ox
dc.titleElectrical Isolation of ZnO by Ion Bombardment
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume81
dc.date.issued2002
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub2959
local.type.statusPublished Version
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYano, Mitsuaki, Osaka Institute of Technology
local.contributor.affiliationKoike, Kazuto, Osaka Institute of Technology
local.contributor.affiliationSasa, Shigehiko, Osaka Institute of Technology
local.contributor.affiliationInoue, Makoto, National Astronomical Observatory of Japan
local.contributor.affiliationOgata, Ken Ichi, Osaka Institute of Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue18
local.bibliographicCitation.startpage3350
local.bibliographicCitation.lastpage3352
local.identifier.doi10.1063/1.1518560
dc.date.updated2016-02-24T09:48:36Z
local.identifier.scopusID2-s2.0-79956026568
CollectionsANU Research Publications

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