Ion-beam-produced Damage and its Stability in AIN Films
Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV197Au+ ions at room and liquid-nitrogen temperatures (RT and LN2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at...[Show more]
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|Source:||Journal of Applied Physics|
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