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Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Kim, Yong; Guo, Yanan; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Jagadish, Chennupati; Tan, Hark Hoe


GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699778


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