Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Kim, Yong; Guo, Yanan; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hoe Hark; Jagadish, Chennupati
Description
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2010 |
| Type: | Conference paper |
| URI: | http://hdl.handle.net/1885/71908 |
| Source: | 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings |
| DOI: | 10.1109/COMMAD.2010.5699778 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Kang_Structural_and_optical_2010.pdf | 1.17 MB | Adobe PDF | Request a copy |
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