Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Kim, Yong; Guo, Yanan; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hoe Hark; Jagadish, Chennupati
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
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|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
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