Compact passive devices in InP membrane on silicon
The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators).
|Collections||ANU Research Publications|
|Source:||European Conference on Optical Communication, ECOC|
|01_Bordas_Compact_passive_devices_in_InP_2009.pdf||237.96 kB||Adobe PDF||Request a copy|
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