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Spherical Indentation of Compound Semiconductors

Bradby, Jodie; Williams, James; Wong-Leung, Yin-Yin (Jennifer); Kucheyev, Sergei; Swain, Michael Vincent; Munroe, Paul

Description

Details of indentation-induced mechanical deformation of GaAs, InP and GaN have been studied. In particular, the origin of the discontinuities in the load-penetration curves during loading (so-called 'pop-in' events) was examined. Cross-sectional transmission electron microscopy (XTEM) samples of indents were prepared using focused-ion-beam milling. Atomic force microscopy (AFM) was used to examine the surface deformation after indentation. In all materials, slip appeared to be in the prime...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/71684
Source: Philosophical Magazine A
DOI: 10.1080/01418610210135089

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