Spherical Indentation of Compound Semiconductors
Details of indentation-induced mechanical deformation of GaAs, InP and GaN have been studied. In particular, the origin of the discontinuities in the load-penetration curves during loading (so-called 'pop-in' events) was examined. Cross-sectional transmission electron microscopy (XTEM) samples of indents were prepared using focused-ion-beam milling. Atomic force microscopy (AFM) was used to examine the surface deformation after indentation. In all materials, slip appeared to be in the prime...[Show more]
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|Source:||Philosophical Magazine A|
|01_Bradby_Spherical_Indentation_of_2002.pdf||1.6 MB||Adobe PDF||Request a copy|
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