Engineering the morphology and optical properties of InP-based InAsSb/InGaAs nanostructures via Sb exposure and graded growth techniques
Two growth techniques - antimony exposure and graded growth, were proposed to achieve the control over the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By exposing the surface of InGaAs buffer layer to trimethylantimony precursor before the growth of InAsSb nanostructures, the surface/interface energy in the system is reduced, while the strain energy in the system is enhanced. This leads to a change of island shape from dot structure to wire structure....[Show more]
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