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MOCVD-grown indium phosphide nanowires for optoelectronics

Paiman, S.; Gao, Qiang; Joyce, Hannah J; Tan, Hoe Hark; Jagadish, Chennupati; Kim, Yong; Guo, YaNan; Pemasiri, Kuranananda; Montazeri, Mohammad; Jackson, Howard E; Smith, Leigh M


We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
Source: Advanced Materials Research Volume 832
DOI: 10.4028/


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