Durand, Corentin; Capiod, P.; Berthe, M.; Xu, Tao; Nys, J.P.; Leturcq, Renaud; Caroff, Philippe; Grandidier, B.
In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of semiconductor materials at the atomic scale and can be successfully applied to study the nanofaceting morphology, the atomic structure and the surface composition of oxide-free nanowire sidewalls. Based...[Show more]
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