Plasmonics for III-V semiconductor solar cells
III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2...[Show more]
|Collections||ANU Research Publications|
|Source:||2012 IEEE Photonics Conference, IPC 2012|
|01_Mokkapati_Plasmonics_for_III-V_2012.pdf||351.81 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.