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Plasmonics for III-V semiconductor solar cells

Mokkapati, Sudha; Lu, Hao Feng; Turner, Samuel (Sam); Fu, Lan; Tan, Hoe Hark; Jagadish, Chennupati

Description

III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/71417
Source: 2012 IEEE Photonics Conference, IPC 2012
DOI: 10.1109/IPCon.2012.6358486

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