Skip navigation
Skip navigation

Plasmonics for III-V semiconductor solar cells

Mokkapati, Sudha; Lu, Hao Feng; Turner, Samuel (Sam); Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe


III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: 2012 IEEE Photonics Conference, IPC 2012
DOI: 10.1109/IPCon.2012.6358486


File Description SizeFormat Image
01_Mokkapati_Plasmonics_for_III-V_2012.pdf351.81 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator