Mokkapati, Sudha; Lu, Hao Feng; Turner, Samuel (Sam); Fu, Lan; Tan, Hoe Hark; Jagadish, Chennupati
III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2...[Show more]
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