Photonic integration in indium-phosphide membranes on silicon
A new photonic integration technique is presented, which enables the use of indium-phosphide-based membranes on top of silicon chips. This can provide the electronic chips (complementary metal-oxide semiconductor (CMOS)) with an added optical layer (indium-phosphide membrane on silicon (IMOS)) for resolving the communication bottleneck. Very small passive devices have been realised, with performances comparable to other membrane devices (propagation loss 7 dB/cm, negligible bending loss for...[Show more]
|Collections||ANU Research Publications|
|Source:||I E T Optoelectronics|
|01_van de Tol_Photonic_integration_in_2011.pdf||664.9 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.