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Modeling recombination at the Si-Al2O3 interface

Black, Lachlan; McIntosh, Keith

Description

We present a complete set of data on the surface passivation parameters of APCVD Al2O3 deposited with TEDA-TSB and H2O precursors at temperatures between 325 and 520°C. Using measured values of the fixed charge Qf, and of the interface defect density D i

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/71293
Source: Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC)
DOI: 10.1109/PVSC.2012.6317600

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