Characterization of stress in amorphous silicon nitride and implications to c-Si surface passivation
In this work we study stress in amorphous silicon nitride (SiNx) deposited by semi-remote microwave plasma-enhanced chemical vapor deposition. The film stress, determined from the change in wafer curvature before and after SiNx deposition, is found to depend on SiNx stoichiometry irrespective of process conditions. We demonstrate that an increase in stress correlates to a shift of the Si-H stretching vibrational peak to a higher wavenumber and an increase of total bond density of N-related...[Show more]
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|Source:||Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC)|
|01_Wan_Characterization_of_stress_in_2012.pdf||727.96 kB||Adobe PDF||Request a copy|
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