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Pulsed laser deposited InGaZnO thin film on silica glass

Chen, Jiangbo; Wang, Li; Su, Xueqiong; Wang, Rongping

Description

High purity Ga2O3, In2O3, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase...[Show more]

dc.contributor.authorChen, Jiangbo
dc.contributor.authorWang, Li
dc.contributor.authorSu, Xueqiong
dc.contributor.authorWang, Rongping
dc.date.accessioned2015-12-13T22:17:35Z
dc.identifier.issn0022-3093
dc.identifier.urihttp://hdl.handle.net/1885/71221
dc.description.abstractHigh purity Ga2O3, In2O3, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm2/(V·s), a minimum resistivity of 5.57 × 10- 4 Ω cm, and a highest carrier concentration of 3.95 × 1020 cm- 3.
dc.publisherElsevier
dc.sourceJournal of Non-crystalline Solids
dc.subjectKeywords: Amorphous structures; As-grown films; Ceramic target; High purity; IGZO; Molar ratio; Oxygen partial pressure; Oxygen pressure; Room temperature; Solid state reaction method; Structural and physical properties; ZnO powder; Amorphous films; Oxygen vacancie IGZO; Oxygen vacancy; Pulsed laser deposition; Solid-state reaction
dc.titlePulsed laser deposited InGaZnO thin film on silica glass
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume358
dc.date.issued2012
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.ariespublicationf5625xPUB2615
local.type.statusPublished Version
local.contributor.affiliationChen, Jiangbo, Beijing University of Technology
local.contributor.affiliationWang, Li, Beijing University of Technology
local.contributor.affiliationSu, Xueqiong, Beijing University of Technology
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue17
local.bibliographicCitation.startpage2466
local.bibliographicCitation.lastpage2469
local.identifier.doi10.1016/j.jnoncrysol.2011.12.039
dc.date.updated2016-02-24T09:00:40Z
local.identifier.scopusID2-s2.0-84865735258
local.identifier.thomsonID000310394700130
CollectionsANU Research Publications

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