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Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory

Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua; Wang, Rongping; Wu, Liangcai; Lv, Yegang; Chen, Fen; Fu, Jing; Dai, Shixun; Li, Jun


Al x(Ge 2Sb 2Te 5) 100-x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge 2Sb 2Te 5 (GST) films show better thermal stability than GST because they do not have

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/45/37/375302


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