Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory
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Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang; Wang, Rongping; Wu, Liangcai; Lv, Yegang; Fu, Jing; Xu, Tiefeng; Dai, Shixun
Description
The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2012 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/71031 |
| Source: | Materials Letters |
| DOI: | 10.1016/j.matlet.2012.08.003 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Wang_Advantages_of_Zn_1.25_Sb_2_Te__2012.pdf | 434.42 kB | Adobe PDF | Request a copy |
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