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Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory

Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang; Wang, Rongping; Wu, Liangcai; Lv, Yegang; Fu, Jing; Xu, Tiefeng; Dai, Shixun


The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Materials Letters
DOI: 10.1016/j.matlet.2012.08.003


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