Gallium Contacts on p-type Silicon Substrates
A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0·5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of...[Show more]
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|Source:||Progress in Photovoltaics: Research and Applications|
|01_Stuckings_Gallium_Contacts_on_p-type_2001.pdf||122.52 kB||Adobe PDF||Request a copy|
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