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Gallium Contacts on p-type Silicon Substrates

Stuckings, Michael; Fischer, B; Giroult, G; Cuevas, Andres; Stocks, Matthew; Blakers, Andrew

Description

A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0·5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/70927
Source: Progress in Photovoltaics: Research and Applications
DOI: 10.1002/pip.393

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