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Compensation engineering for uniform n-type silicon ingots

Forster, Maxime; Dehestru, B; Thomas, A; Fourmond, E; Einhaus, Roland; Cuevas, Andres; Lemiti, M

Description

This paper addresses a major issue related to the use of upgraded-metallurgical grade silicon for n-type solar cells. We show that n-type silicon ingots, grown from silicon feedstock containing both boron and phosphorus, display a vertical net doping variation which is incompatible with high-yield production of high-efficiency solar cells. As a solution, we propose to use compensation engineering, by means of gallium co-doping, and demonstrate its potential to control the net doping along the...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/70766
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/j.solmat.2013.01.001

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