Compensation engineering for uniform n-type silicon ingots
This paper addresses a major issue related to the use of upgraded-metallurgical grade silicon for n-type solar cells. We show that n-type silicon ingots, grown from silicon feedstock containing both boron and phosphorus, display a vertical net doping variation which is incompatible with high-yield production of high-efficiency solar cells. As a solution, we propose to use compensation engineering, by means of gallium co-doping, and demonstrate its potential to control the net doping along the...[Show more]
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|Source:||Solar Energy Materials and Solar Cells|
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