Wan, Yimao; Bullock, James; Cuevas, Andres
We demonstrate effective passivation of a variety of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited (ALD) tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) underneath a capping silicon nitride (SiN <inf>x</inf> ) layer by plasma enhanced chemical vapor deposited (PECVD). Surface recombination is investigated as a function of Ta<inf>2</inf>O<inf>5</inf> thickness for p- and n-type Si substrates, both with and without boron (p +) or phosphorus (n +) diffusions. It is found that...[Show more]
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