A practical approach to reactive ion etching
In this paper, general aspects of the reactive ion etching (RIE) technique will be described, such as anisotropy, loading effect, lag effect, RIE chemistries and micro-masking, followed by a brief overview of etching dielectrics (SiOx, SiNx) and crystalline Si. The second section of the paper is dedicated to etching III-V compound semiconductors where, based on RIE results of GaN material, a simple and practical thermodynamic approach is exposed, explaining the criteria for selecting the best...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
|01_Karouta_A_practical_approach_to_2014.pdf||4.35 MB||Adobe PDF||Request a copy|
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