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Amorphous silicon passivated contacts for diffused junction silicon solar cells

Bullock, James; Yan, Di; Wan, Yimao; Cuevas, Andres; Demaurex, Benedicte; Hessler-Wyser, Aicha; De Wolf, Stefaan

Description

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16 nm) the recombination loss at metal-contacted phosphorus (n +) and boron (p+) diffused surfaces...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/70532
Source: Journal of Applied Physics
DOI: 10.1063/1.4872262

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