Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
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