Skip navigation
Skip navigation

Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

Johnson, Brett; Haberl, Bianca; Bradby, Jodie; McCallum, Jeffrey C; Williams, James


A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.83.235205


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator